1.5ka6.8 thru 1.5ka47a vishay general semiconductor document number: 88300 revision: 09-feb-11 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 1 par ? transient voltage suppressors high temperature st ability and high relia bility conditions typical applications use in sensitive electronics protection against voltage transients induced by indu ctive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 185 c capability suitable for high reliability and automo tive requirement ? available in uni-directional polarity only ? 1500 w peak pulse power capability with a 10/1000 s waveform ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: molded epoxy body over passivated junction molding compound meets ul 94 v-0 flammability rating base p/nhe3 - rohs comp liant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) 8.3 ms single half sine-wave or equivalent squar e wave, duty cycle = 4 pulses per minute maximum primary characteristics v br 6.8 v to 47 v p ppm 1500 w p d 6.5 w i fsm 200 a t j max. 185 c case style 1.5ka maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit peak pulse power dissipatio n with a 10/1000 s waveform (1) (fig. 1) p ppm 1500 w peak pulse current at t a = 25 c with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a power dissipation on infi nite heatsink at t l = 75 c (fig. 5) p d 6.5 w peak forward surge current 8.3 ms single half sine-wave (2) i fsm 200 a maximum instantaneous forward voltage at 100 a (2) v f 3.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
1.5ka6.8 thru 1.5ka47a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88300 revision: 09-feb-11 2 notes (1) v br measured after i t applied for 300 s = square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35 electrical characteristics (t a = 25 c unless otherwise noted) device type breakdown voltage v br (1) at i t (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) t j = 150 c maximum reverse leakage at v wm i d (a) peak pulse current i ppm (2) (a) maximum clamping vol tag e at i ppm v c (v) maximum temp. coefficient of v br (%/c) min. max. 1.5ka6.8 6.12 7.48 10 5.50 1000 10 000 139 10.8 0.057 1.5ka6.8a 6.45 7.14 10 5.80 1000 10 000 143 10.5 0.057 1.5ka7.5 6.75 8.25 10 6.05 500 5000 128 11.7 0.061 1.5ka7.5a 7.13 7.88 10 6.40 500 5000 133 11.3 0.061 1.5ka8.2 7.38 9.02 10 6.63 200 2000 120 12.5 0.065 1.5ka8.2a 7.79 8.61 10 7.02 200 2000 124 12.1 0.065 1.5ka9.1 8.19 10.0 1.0 7.37 50 500 109 13.8 0.068 1.5ka9.1a 8.65 9.55 1.0 7.78 50 500 112 13.4 0.068 1.5ka10 9.00 11.0 1.0 8.10 20 200 100 15.0 0.073 1.5ka10a 9.50 10.5 1.0 8.55 20 200 103 14.5 0.073 1.5ka11 9.90 12.1 1.0 8.92 5.0 50 92.6 16.2 0.075 1.5ka11a 10.5 11.6 1.0 9.40 5.0 50 96.2 15.6 0.076 1.5ka12 10.8 13.2 1.0 9.72 2.0 10 86.7 17.3 0.076 1.5ka12a 11.4 12.6 1.0 10.2 2.0 10 89.8 16.7 0.078 1.5ka13 11.7 14.3 1.0 10.5 2.0 10 78.9 19.0 0.081 1.5ka13a 12.4 13.7 1.0 11.1 2.0 10 82.4 18.2 0.081 1.5ka15 13.5 16.3 1.0 12.1 1.0 10 68.2 22.0 0.084 1.5ka15a 14.3 15.8 1.0 12.8 1.0 10 70.8 21.2 0.084 1.5ka16 14.4 17.6 1.0 12.9 1.0 10 63.8 23.5 0.086 1.5ka16a 15.2 16.8 1.0 13.6 1.0 10 66.7 22.5 0.086 1.5ka18 16.2 19.8 1.0 14.5 1.0 10 56.6 26.5 0.088 1.5ka18a 17.1 18.9 1.0 15.3 1.0 10 59.5 25.2 0.088 1.5ka20 18.0 22.0 1.0 16.2 1.0 10 51.5 29.1 0.090 1.5ka20a 19.0 21.0 1.0 17.1 1.0 10 54.2 27.7 0.090 1.5ka22 19.8 24.2 1.0 17.8 1.0 10 47.0 31.9 0.092 1.5ka22a 20.9 23.1 1.0 18.8 1.0 10 49.0 30.6 0.092 1.5ka24 21.6 26.4 1.0 19.4 1.0 10 43.2 34.7 0.094 1.5ka24a 22.8 25.2 1.0 20.5 1.0 10 45.2 33.2 0.094 1.5ka27 24.3 29.7 1.0 21.8 1.0 10 38.4 39.1 0.096 1.5ka27a 25.7 28.4 1.0 23.1 1.0 10 40.0 37.5 0.096 1.5ka30 27.0 33.0 1.0 24.3 1.0 10 34.5 43.5 0.097 1.5ka30a 28.5 31.5 1.0 25.6 1.0 10 36.2 41.4 0.097 1.5ka33 29.7 36.3 1.0 26.8 1.0 10 31.4 47.7 0.098 1.5ka33a 31.4 34.7 1.0 28.2 1.0 10 32.8 45.7 0.098 1.5ka36 32.4 39.6 1.0 29.1 1.0 10 28.8 52.0 0.099 1.5ka36a 34.2 37.8 1.0 30.8 1.0 10 30.1 49.9 0.099 1.5ka39 35.1 42.9 1.0 31.6 1.0 10 26.6 56.4 0.100 1.5ka39a 37.1 41.0 1.0 33.3 1.0 10 27.8 53.9 0.100 1.5ka43 38.7 47.3 1.0 34.8 1.0 20 24.2 61.9 0.101 1.5ka43a 40.9 45.2 1.0 36.8 1.0 20 25.3 59.3 0.101 1.5ka47 42.3 51.7 1.0 38.1 1.0 20 22.1 67.8 0.101 1.5ka47a 44.7 49.4 1.0 40.2 1.0 20 23.1 64.8 0.101
1.5ka6.8 thru 1.5ka47a vishay general semiconductor document number: 88300 revision: 09-feb-11 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 3 note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 ? c unless otherwise noted) ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode 1.5ka6.8ahe3/54 (1) 0.916 54 1400 13" diameter paper tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 0.1 1.0 10 100 n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms t d - p u lse w idth (s) p ppm - peak p u lse po w er (k w ) 0 25 50 75 100 0 75 25 50 100 125 150 175 200 t j - initial temperat u re (c) peak p u lse p o w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical junction capacitance unidirectional 0 50 100 150 t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 t d 10/1000 s w a v eform as defined b y r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak p u lse c u rrent, % i rsm t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm meas u red at zero bias 10 1.0 100 100 1000 10 000 20 000 c j - j u nction capacitance (pf) v br - breakdo w n v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at stand-off v oltage v w m
1.5ka6.8 thru 1.5ka47a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88300 revision: 09-feb-11 4 package outline dimensions in inches (millimeters) figure 5. power derating curve 0 25 50 75 100 0 75 25 100 125 150 175 200 50 p d - po w er dissipation (%) t l - lead temperat u re (c) l = 0.375" (9.5 mm) lead lengths 60 hz resisti v e or ind u cti v e load figure 6. maximum non-repetitive/peak forward surge current 11 0 100 i fsm - peak for w ard s u rge c u rrent (a) nu m b er of cycles at 60 hz 10 100 200 t l = 75 c 8 .3 ms single half sine- w a v e 1.0 (25.4) mi n . 1.0 (25.4) mi n . 0.375 (9.5) 0.2 8 5 (7.2) 0.210 (5.3) 0.190 (4. 8 ) dia. 0.042 (1.07) 0.03 8 (0.96) dia. case style 1.5ka
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